The Effects of SR Irradiation on Tin-Doped Indium Oxide Thin Film Prepared by RF Magnetron Sputtering

Tin-doped indium oxide (ITO) thin films have been widely used as transparent electrodes of flat panel displays and solar cells because of its low electrical resistivity and high transmittance to visible light. In order to improve the electrical and optical properties of ITO thin films, many attempts have been carried out by means of several methods, for example, highly dense plasma assisted electron beam evaporation [1], RF-superimposed DC sputtering [2], and so on. Recently, extensive improvements of electrical properties were achieved by combining pulsed laser deposition with pulsed laser irradiation [3]. This result suggests that photon irradiation may improve the properties of the materials and it is expected that SR irradiation at various wavelength region may be effective. In this work, the electrical, optical and structural properties of ITO thin films irradiated with synchrotron radiation (SR) were investigated.